VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERS

• M. T. Wauk

  Stanford University, Stanford, California 94305

• D. K. Winslow

  Stanford University, Stanford, California 94305

抄録

Thin-film microwave acoustic transducers of piezoelectric aluminum nitride (AlN) have been vacuum deposited by two methods. Aluminum nitride was deposited on metallic film substrates at 300°–1200°C by evaporating aluminum in the presence of either nitrogen gas dissociated in an ac discharge or in the presence of ammonia gas. Longitudinal ultrasonic waves were generated in a sapphire rod with a one-way-tuned conversion loss of 10 dB at 1700 MHz.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 13 (8), 286-288, 1968-10-15

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1364233269058925696
• NII論文ID: 30015802276
• DOI: 10.1063/1.1652613
• ISSN: 10773118
• ISSN: 00036951
• ISSN: http://id.crossref.org/issn/00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/13/8/286/18421565/286_1_online.pdf
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