Fabrication and characterization of Ba1−xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions
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- Seiji Suzuki
- Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
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- Tetsuya Yamamoto
- Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
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- Hiroshi Suzuki
- Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
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- Kenichi Kawaguchi
- Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
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- Kazuhiko Takahashi
- Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
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- Yorinobu Yoshisato
- Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
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抄録
<jats:p>A reproducible process for fabricating Ba1−xKxBiO3/Nb-doped SrTiO3 (BKBO/STNO) all-oxide-type Schottky junctions has been established, and the electrical properties of the junctions have been investigated at room temperature. Improving the STNO surface conditions by high-temperature oxygen-annealing made it possible to fabricate junctions with good rectification properties. The current–voltage characteristics of the junctions were explained by conventional thermionic emission theory. Anomalous capacitance–voltage characteristics of the junctions were observed and were analyzed with a model taking into account the electric-field-dependent permittivity of STNO and the presence of the interfacial layer. The potential barrier profile of the BKBO/STNO interface was calculated and it can be concluded that this model quantitatively explains the capacitance–voltage characteristics.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 81 (10), 6830-6836, 1997-05-15
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1362825895943607936
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- NII論文ID
- 30015821601
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.365242
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- ISSN
- 10897550
- 00218979
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