Fabrication and characterization of Ba1−xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions

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  • Seiji Suzuki
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Tetsuya Yamamoto
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Hiroshi Suzuki
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Kenichi Kawaguchi
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Kazuhiko Takahashi
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Yorinobu Yoshisato
    Tsukuba Research Center, SANYO Electric Co., Ltd., 2-1 Koyadai, Tsukuba, Ibaraki 305, Japan

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<jats:p>A reproducible process for fabricating Ba1−xKxBiO3/Nb-doped SrTiO3 (BKBO/STNO) all-oxide-type Schottky junctions has been established, and the electrical properties of the junctions have been investigated at room temperature. Improving the STNO surface conditions by high-temperature oxygen-annealing made it possible to fabricate junctions with good rectification properties. The current–voltage characteristics of the junctions were explained by conventional thermionic emission theory. Anomalous capacitance–voltage characteristics of the junctions were observed and were analyzed with a model taking into account the electric-field-dependent permittivity of STNO and the presence of the interfacial layer. The potential barrier profile of the BKBO/STNO interface was calculated and it can be concluded that this model quantitatively explains the capacitance–voltage characteristics.</jats:p>

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