Electrical properties of β-FeSi2/Si heterojunctions

DOI PDF 被引用文献5件
  • C. A. Dimitriadis
    Department of Physics, University of Thessaloniki, 540 06 Thessaloniki, Greece

この論文をさがす

抄録

<jats:p>The electrical properties of heterojunctions of polycrystalline films of β-FeSi2 grown on n-type single-crystal silicon are investigated. The dark current-voltage and capacitance-voltage characteristics are measured over a wide temperature range. Analysis of the data reveal that multistep tunneling is the current conduction mechanism due to a high density of interface defects.</jats:p>

収録刊行物

被引用文献 (5)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ