Study of epitaxial platinum thin films grown by metalorganic chemical vapor deposition

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  • B. S. Kwak
    School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
  • P. N. First
    School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
  • A. Erbil
    School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
  • B. J. Wilkens
    Bell Communications Research, Red Bank, New Jersey 07701-7020
  • J. D. Budai
    Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831
  • M. F. Chisholm
    Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831
  • L. A. Boatner
    Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831

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<jats:p>The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO3) and strontium titanate (SrTiO3). Platinum thin films grown on KTaO3 (100) at a rate of 70 nm/h showed strong Rutherford backscattering spectroscopy (RBS)/channeling effects with a χmin of 4%. In-plane φ and θ-2θ scan x-ray diffraction analysis demonstrated the three-dimensional epitaxial alignment of the platinum film with the KTaO3 substrate. Transmission electron micrographs viewed in cross section provided additional information regarding the nature of the epitaxial Pt-KTaO3 interface. The room-temperature resistivity of a 60-nm-thick Pt film on KTaO3 (100) was 12.0 μΩ cm. X-ray diffraction and pole-figure analysis showed that in the case of Pt films deposited on either fused quartz or Si (100) surfaces, the resulting films were polycrystalline and were fully textured with &lt;111≳ orientations perpendicular to the substrate surfaces.</jats:p>

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