Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates

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  • P. Kung
    Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
  • C. J. Sun
    Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
  • A. Saxler
    Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
  • H. Ohsato
    Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
  • M. Razeghi
    Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208

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Abstract

<jats:p>In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00⋅1)Al2O3 have a better epilayer-substrate interface quality than those grown on (01⋅2)Al2O3. We also show the epilayer grown on (00⋅1)Al2O3 are gallium-terminated, and both (00⋅1) and (01⋅2) surfaces of sapphire crystals are oxygen-terminated.</jats:p>

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