Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification technique

DOI PDF 被引用文献22件
  • T. Takahagi
    Functional Structure Research Group, Kuroda Solid Surface Project, Research Development Corporation of Japan, Sonoyama 1-1-1, Otsu, Shiga 520, Japan
  • A. Ishitani
    Functional Structure Research Group, Kuroda Solid Surface Project, Research Development Corporation of Japan, Sonoyama 1-1-1, Otsu, Shiga 520, Japan
  • H. Kuroda
    Functional Structure Research Group, Kuroda Solid Surface Project, Research Development Corporation of Japan, Sonoyama 1-1-1, Otsu, Shiga 520, Japan
  • Y. Nagasawa
    Toray Research Center, Inc., Sonoyama 1-1-1, Otsu, Shiga 520, Japan
  • H. Ito
    Toray Research Center, Inc., Sonoyama 1-1-1, Otsu, Shiga 520, Japan
  • S. Wakao
    Toray Research Center, Inc., Sonoyama 1-1-1, Otsu, Shiga 520, Japan

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<jats:p>A technique is developed to control the chemical reactivity of a silicon single-crystal surface through chemical modification with atomic hydrogen. The reactivity of the reconstructed single-crystal surface prepared by high-temperature treatment in an ultrahigh vacuum is significantly decreased by capping the dangling bonds of top-layer silicon atoms with hydrogen atoms. The Si—H bonds on the hydrogenated surface are found to be much more stable against oxidation than the Si—Si back bonds. The hydrogen-passivated silicon surface is reactivated by electron beam irradiation. An ultrathin oxide layer pattern can be prepared using preferential oxidation of the area reactivated by a focused electron beam.</jats:p>

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