Spatial distribution of charges in ultrathin polyimide Langmuir–Blodgett films

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  • Mitsumasa Iwamoto
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152, Japan
  • Atsushi Fukuda
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152, Japan
  • Eiji Itoh
    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152, Japan

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<jats:p>The spatial distribution of charges in ultrathin polyimide (PI) Langmuir–Blodgett (LB) films, with a monolayer thickness of 0.4 nm, deposited onto metals was determined by measuring the surface potential of the PI LB films as a function of the number of deposited layers. The depth of penetration of the excess charges displaced from metal electrodes into the PI LB films was about 3 nm. The saturated surface potential was an accurately linear function of the work function of the metal. We concluded that excess charges (mainly electrons) were transferred from metals into as-deposited PI LB films until thermodynamic equilibrium was established at the metal/PI interface by electron tunneling.</jats:p>

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