Effect of oxygen pressure on the synthesis of YBa2Cu3O7−<i>x</i> thin films by post-deposition annealing

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  • R. Feenstra
    Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057
  • T. B. Lindemer
    Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057
  • J. D. Budai
    Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057
  • M. D. Galloway
    Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057

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<jats:p>The effect of ambient oxygen pressure on the synthesis of epitaxial YBa2Cu3O7−x films on (100) SrTiO3 substrates by post-deposition annealing of amorphous precursor films was studied for oxygen partial pressures pO2 between 1.0 and 8.0×10−5 atm and annealing temperatures between 890 and 650 °C. A pO2−1/T diagram containing recent literature data regarding YBa2Cu3O7−x oxygen stoichiometry, phase stability, and liquid-phase formation was compiled to provide guidance for the selection and interpretation of annealing conditions. The results evidence a strong dependency of growth properties on the oxygen pressure with enhanced c-oriented epitaxy at lower pO2 values. A particularly interesting result is the formation of predominantly c-oriented films at 740 °C and pO2=2.6×10−4 atm (0.2 Torr). Similar to YBa2Cu3O7−x films produced by in situ laser ablation at the same temperature and oxygen pressure, the films exhibited low ion channeling yields (χmin&lt;0.1) and a dense (smooth) surface morphology, while critical currents at 77 K were well in excess of 1 MA/cm2. From the observed systematic variation of structural film properties with synthesis conditions, annealing lines were derived indicating (T-pO2) combinations for either c- or a-oriented epitaxial growth. A comparison is made between these lines and synthesis conditions for in situ film growth as compiled recently by Hammond and Bormann [Physica C 162–169, 703 (1989)].</jats:p>

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