Electron optical characterization of cubic boron nitride thin films prepared by reactive ion plating

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  • D. R. McKenzie
    School of Physics and Electron Microscope Unit, University of Sydney, N.S.W., 2006, Australia
  • D. J. H. Cockayne
    School of Physics and Electron Microscope Unit, University of Sydney, N.S.W., 2006, Australia
  • D. A. Muller
    School of Physics and Electron Microscope Unit, University of Sydney, N.S.W., 2006, Australia
  • M. Murakawa
    Nippon Institute of Technology, Gakuendai, Miyashiro-machi, 1 Saitama 345, Japan
  • S. Miyake
    Nippon Institute of Technology, Gakuendai, Miyashiro-machi, 1 Saitama 345, Japan
  • S. Watanabe
    Nippon Institute of Technology, Gakuendai, Miyashiro-machi, 1 Saitama 345, Japan
  • P. Fallon
    Cavendish Laboratory, University of Cambridge, Madingley Rd., Cambridge, CB3OHE, England

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<jats:p>Boron nitride films prepared by reactive ion plating from a boron evaporation source were characterized structurally using three independent electron optical techniques: energy filtered electron diffraction with radial distribution function analysis; electron energy-loss spectroscopy of the near-edge structure of the boron K edge; and spectroscopy of the plasmon region of the energy-loss spectrum. Both specimens had a graded BNx layer between the BN layer and the silicon substrate and in addition one specimen had a titanium bonding layer underneath the BNx layer. The presence of c-BN in both specimens was confirmed by all techniques. The specimen with the titanium bonding layer was examined in cross section and showed essentially pure c-BN on the surface. A model for the formation of c-BN assisted by the compressive stress generated during deposition is proposed.</jats:p>

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