Highly stable sputtered NiInW refractory ohmic contact to <i>n</i>-type GaAs

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  • M. C. Hugon
    Institut Universitaire de Technologie de Paris Sud, Plateau du Moulon, B.P. 127, 91403 Orsay Cedex, France
  • B. Agius
    Institut Universitaire de Technologie de Paris Sud, Plateau du Moulon, B.P. 127, 91403 Orsay Cedex, France
  • F. Varniere
    Institut Universitaire de Technologie de Paris Sud, Plateau du Moulon, B.P. 127, 91403 Orsay Cedex, France
  • M. Froment
    Physique des Liquides et Electrochimie, UPR4, CNRS, Université Pierre et Marie Curie, Tour 22, 4 place Jussieu, 75230 Paris Cedex 05, France
  • F. Pillier
    Physique des Liquides et Electrochimie, UPR4, CNRS, Université Pierre et Marie Curie, Tour 22, 4 place Jussieu, 75230 Paris Cedex 05, France

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<jats:p>Thermally stable low specific resistivity ohmic contact on n-type GaAs is required to fabricate high-speed GaAs integrated circuits. The Nix-In1−x/W (x being either 0.95 or 0.9) contact prepared by magnetron cathodic sputtering is attractive because this contact is expected to be ohmic and thermally stable after rapid thermal annealing. Moreover, the sputter deposition is well suited for refractory metals. The specific resistivity measurements and microstructural analysis were carried out to establish a simple fabrication process which forms an ohmic contact with low specific resistivity. This last parameter was found to be sensitive to the deposition sequence, and the annealing time and temperature. Low specific resistivity of 10−6 Ω cm2 was obtained for Nix-In1−x/W contact annealing at 850 °C for 10 s. This rapid thermal annealing is interesting because simultaneous annealing for contact formation and activation of implanted dopants is possible. The formation of phases during heat treatment stimulates the Schottky to ohmic contact conversion.</jats:p>

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