2–10 nm scale plasma polymerized organic films

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  • K. Senda
    Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
  • G. K. Vinogradov
    Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
  • S. Gorwadkar
    Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
  • S. Morita
    Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan

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<jats:p>Ultrathin organic films can be used in electronics for several applications. There are a few ways of preparation of such films and one is plasma polymerization. Traditionally, comparatively thick films, 100–1000 nm, are deposited by this method and studied. But, for electronic devices, 10 nm or thinner films are of great importance to any wet technique considered to be unsuitable for perfect layer formation. In this work we have deposited 2–10 nm scale ultrathin hydrocarbon films on silicon wafers. A capacitively coupled rf discharge was initiated in a short residence time box-type reactor in a uniform flow of an acetylene/argon mixture. The gas kinetic residence time in the plasma zone was limited to 5–70 ms to decrease synthesis of heavy gas phase products and to suppress particulate formation. Distribution of film thickness after the deposition was measured by an ellipsometer. The film surface topography was studied by an atomic force microscope that shows the films are smooth and pinhole free. Thus our preliminary results suggest that ultrathin uniform smooth organic films suitable for electronic applications can be deposited in a reproducible manner.</jats:p>

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