Electric-field-induced refractive index changes in three-step asymmetric coupled quantum wells
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- Nobuhiko Susa
- NTT Opto-Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi 243-01, Japan
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<jats:p>A scheme for enhancing the refractive index change Δn in the wavelength region longer than that for an n=1 heavy-hole exciton peak, where the absorption coefficient α is small, is proposed and three-step GaAs/AlGaAs quantum wells (QWs) are numerically analyzed as an example. The basis of this scheme is that an electric-field-dependent oscillator strength can be controlled by designing a QW structure which yields either positive or negative absorption change, Δα at all wavelengths, resulting in an increase in the Δn in the longer wavelength region and a reduction in the operating electric field. The numerical analysis predicts that the electric field for the three-step QW that yields a Δn of ∼10−2 is as small as 5–15 kV/cm which is about one order of magnitude smaller than that for a conventional square-potential QW. In addition, the Δn and the figure-of-merit, which is defined as Δn/α, are larger than those for the conventional QW in the longer wavelength region.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 73 (12), 8463-8470, 1993-06-15
AIP Publishing
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詳細情報
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- CRID
- 1363951794903896832
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- NII論文ID
- 30015849894
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.353420
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- ISSN
- 10897550
- 00218979
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