The origin of defects in SiO2 thermally grown on Czochralski silicon substrates

• Manabu Itsumi

  LSI Laboratories, NTT, Atsugi-shi, Kanagawa Pref. 243-01, Japan

• Masato Tomita

  Interdisciplinary Research Laboratories, NTT, Musashino-shi, Tokyo 180, Japan

• Masataka Yamawaki

  Interdisciplinary Research Laboratories, NTT, Musashino-shi, Tokyo 180, Japan

抄録

We have observed the origin of defects in SiO2 thermally grown on Czochralski silicon substrates. Samples were prepared by copper decoration to locate oxide defects, focused ion beam etching to mark them, and subsequent silicon-substrate thinning for transmission electron microscope observation. Polyhedron structures with sizes ranging from 150 to 300 nm are found in the underlying silicon-substrate surface layer just under the oxide defects. Two polyhedron structures superimposed on each other are also observed. It is believed that these structures are related to the presence of oxygen precipitates. Oxide defects are thought to arise due to oxide thinning induced at the edge of the silicon-substrate surface adjacent to the octahedron structures.

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 78 (3), 1940-1943, 1995-08-01

  AIP Publishing

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1361137045831540736
• NII論文ID: 30015853200
• NII書誌ID: AA10457675
• DOI: 10.1063/1.360232
• ISSN: 10897550
• ISSN: 00218979
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/78/3/1940/18677550/1940_1_online.pdf
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