Optimizing the giant magnetoresistance of symmetric and bottom spin valves (invited)

  • W. F. Egelhoff
    National Institute of Standards and Technology, Gaithersburg, Maryland 20899
  • P. J. Chen
    National Institute of Standards and Technology, Gaithersburg, Maryland 20899
  • C. J. Powell
    National Institute of Standards and Technology, Gaithersburg, Maryland 20899
  • M. D. Stiles
    National Institute of Standards and Technology, Gaithersburg, Maryland 20899
  • R. D. McMichael
    National Institute of Standards and Technology, Gaithersburg, Maryland 20899
  • C.-L. Lin
    Center for Micromagnetics and Information Technology, University of Minnesota, Minneapolis, Minnesota 54455
  • J. M. Sivertsen
    Center for Micromagnetics and Information Technology, University of Minnesota, Minneapolis, Minnesota 54455
  • J. H. Judy
    Center for Micromagnetics and Information Technology, University of Minnesota, Minneapolis, Minnesota 54455
  • K. Takano
    Department of Physics, University of California at San Diego, LaJolla, California 92093
  • A. E. Berkowitz
    Department of Physics, University of California at San Diego, LaJolla, California 92093
  • T. C. Anthony
    Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304
  • J. A. Brug
    Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304

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<jats:p>We have attempted to optimize the values of the giant magnetoresistance in symmetric spin valves of the type NiO/Co/Cu/Co/Cu/Co/NiO (achieving 23.4%) and in bottom spin valves of the type Co/Cu/Co/NiO (achieving 17.0%), the largest values ever reported for such structures. The key elements in this achievement are improved vacuum conditions and careful attention to the film thicknesses.</jats:p>

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