Light-illumination-induced transformation of electron traps in hydrogen-implanted <i>n</i>-type silicon

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  • Yutaka Tokuda
    Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
  • Hitoshi Shimada
    Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
  • Akira Ito
    Department of Electronic and Information Engineering, Suzuka National College of Technology, Shiroko, Suzuka 510-0294, Japan

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<jats:p>Light-illumination-induced transformation of electron traps in 170 keV hydrogen-implanted n-type silicon with a dose of 2×1010 cm−2 has been studied with deep level transient spectroscopy for fabricated gold Schottky diodes. In addition to the well-known vacancy-related traps, two hydrogen-related E(0.32) and E(0.49) traps are produced by hydrogen implantation. It is observed that the concentration of vacancy-related traps decreases with illumination of light with a photon energy above the band-gap energy in zero-biased Schottky diodes, while that of hydrogen-related traps increases. No effects of light illumination are found in reverse-biased diodes. It is suggested that the vacancy–oxygen pair is transformed into the E(0.32) trap by adding hydrogen which is liberated from shallow-level, hydrogen-containing defects. The hydrogen liberation is thought to occur through induced instability of them by changing their charge states with electron capture.</jats:p>

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