Growth mechanism of hydrogenated amorphous silicon studied by <i>in situ</i> scanning tunneling microscopy

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  • A. J. Flewitt
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, United Kingdom
  • J. Robertson
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, United Kingdom
  • W. I. Milne
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, United Kingdom

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<jats:p>In situ scanning tunneling microscopy has been used to study the evolution of the surface topography of the growing surface of hydrogenated amorphous silicon (a-Si:H) in order to understand its growth mechanism. The surface is found to possess an island-like structure and the island diameter is found to increase with increasing growth temperature. A Fourier analysis of the surface roughness has an exponent of i=1.17. A comparison of the roughness of films of different thickness gives a dynamic scaling exponent of β=0.28, but the films are not particularly self-affine in character. It is argued that the exponent i is not evidence of a viscous flow regime, but that nonstochastic growth of a random network occurs, caused by a preferential hydrogen abstraction at kink-like and step-like surface sites. A simple simulation of the topography is used to support this conclusion.</jats:p>

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