Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation
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- M. Erman
- Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes-94450 Limeil-Brévannes, France
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- J. B. Theeten
- Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes-94450 Limeil-Brévannes, France
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- P. Chambon
- Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes-94450 Limeil-Brévannes, France
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- S. M. Kelso
- Xerox Palo Alto Research Center, Palo Alto, California 94304
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- D. E. Aspnes
- Bell Communications Research, Murray Hill, New Jersey 07974
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<jats:p>Dielectric functions of partly amorphized GaAs layers produced by deep ion implantation of different doses of 270-keV As+ ions in crystalline (c-) GaAs have been measured from 1.5 to 6.0 eV by spectroscopic ellipsometry. We show that these dielectric functions cannot be described as physical mixtures of amorphous (a-) and c-GaAs, as such models exhibit strong deviations with respect to the data near 3 eV. We determine representations of these dielectric functions as finite sums of harmonic oscillators, which allows us to describe these spectra as analytic functions of a single parameter related to the amount of damage. In this harmonic oscillator approximation (HOA), we show that damage profiles of ion-implanted material can be nondestructively determined from ellipsometric spectra in terms of multilayer models. In a representative case, good agreement is found between damage profiles determined nondestructively in the HOA and destructively by chemical etching.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 56 (10), 2664-2671, 1984-11-15
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360855568837314944
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- NII論文ID
- 30015868510
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.333785
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- ISSN
- 10897550
- 00218979
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