Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation

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  • M. Erman
    Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes-94450 Limeil-Brévannes, France
  • J. B. Theeten
    Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes-94450 Limeil-Brévannes, France
  • P. Chambon
    Laboratoires d’Electronique et de Physique Appliquée, 3, avenue Descartes-94450 Limeil-Brévannes, France
  • S. M. Kelso
    Xerox Palo Alto Research Center, Palo Alto, California 94304
  • D. E. Aspnes
    Bell Communications Research, Murray Hill, New Jersey 07974

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<jats:p>Dielectric functions of partly amorphized GaAs layers produced by deep ion implantation of different doses of 270-keV As+ ions in crystalline (c-) GaAs have been measured from 1.5 to 6.0 eV by spectroscopic ellipsometry. We show that these dielectric functions cannot be described as physical mixtures of amorphous (a-) and c-GaAs, as such models exhibit strong deviations with respect to the data near 3 eV. We determine representations of these dielectric functions as finite sums of harmonic oscillators, which allows us to describe these spectra as analytic functions of a single parameter related to the amount of damage. In this harmonic oscillator approximation (HOA), we show that damage profiles of ion-implanted material can be nondestructively determined from ellipsometric spectra in terms of multilayer models. In a representative case, good agreement is found between damage profiles determined nondestructively in the HOA and destructively by chemical etching.</jats:p>

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