Plasmaless dry etching of silicon with fluorine-containing compounds

• D. E. Ibbotson

  AT&T Bell Laboratories, Murray Hill, New Jersey 07974

• J. A. Mucha

  AT&T Bell Laboratories, Murray Hill, New Jersey 07974

• D. L. Flamm

  AT&T Bell Laboratories, Murray Hill, New Jersey 07974

• J. M. Cook

  AT&T Bell Laboratories, Allentown, Pennsylvania 18103

抄録

Silicon is rapidly etched by the gas-phase halogen fluorides ClF3, BrF3, BrF5, and IF5, in analogy to XeF2 etching silicon. Nearly complete selectivity over SiO2 is achieved in all cases. By contrast, ClF and Groups III and V fluorides such as NF3, BF3, PF3, and PF5 do not spontaneously etch either Si or SiO2 under the same experimental conditions. These relatively inexpensive interhalogens can be applied to pattern silicon and more generally to remove silicon or polysilicon layers without a plasma. Low-temperature plasmaless gasification of substrates by these fluorine-containing interhalogens is an economically attractive alternative to fluorine-based plasma etching.

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 56 (10), 2939-2942, 1984-11-15

  AIP Publishing

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1362825893933690368
• NII論文ID: 30015868553
• NII書誌ID: AA00693547
• DOI: 10.1063/1.333834
• ISSN: 10897550
• ISSN: 00218979
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/56/10/2939/18407713/2939_1_online.pdf
• データソース種別:
  • Crossref
  • CiNii Articles