Electromigration in thin aluminum films on titanium nitride

• I. A. Blech

  Bell Laboratories, Murray Hill, New Jersey 07974

抄録

The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing chemical gradients created by the atom pile-up and depletion at the stripe ends. The threshold may explain several observations reported previously. The threshold is increased by decreasing the temperature or by enclosing the aluminum in silicon nitride. Virtually no electromigration is seen for very short aluminum stripes even at current densities above 106 A/cm2.

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 47 (4), 1203-1208, 1976-04-01

  AIP Publishing

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1360011145107588992
• NII論文ID: 30015869682
• DOI: 10.1063/1.322842
• ISSN: 10897550
• ISSN: 00218979
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/47/4/1203/18372929/1203_1_online.pdf
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