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- Riccardo d’Agostino
- Centro di Studio per la Chimica dei Plasmi del C. N. R., Istituto di Chimica Generale ed Inorganica dell’Università, Bari, Italy
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- Francesco Cramarossa
- Centro di Studio per la Chimica dei Plasmi del C. N. R., Istituto di Chimica Generale ed Inorganica dell’Università, Bari, Italy
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- Santolo De Benedictis
- Centro di Studio per la Chimica dei Plasmi del C. N. R., Istituto di Chimica Generale ed Inorganica dell’Università, Bari, Italy
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- Giovanni Ferraro
- Centro di Studio per la Chimica dei Plasmi del C. N. R., Istituto di Chimica Generale ed Inorganica dell’Università, Bari, Italy
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<jats:p>The emission intensities in the range of 2000–8000 Å of CF, CF2, O, F, CO, CO+, and CO2 produced in CF4/O2 radio-frequency discharges, operated at 1 Torr of pressure and 50 W of power input, have been used to follow the etching process of Si and SiO2, as a function of the CF4/O2 feed composition. The addition of small amounts of nitrogen or argon to the plasma mixtures has permitted the determination of the effect of the oxygen addition to the gas feed on the electron densities of the plasma for a wide range of electron energies. The relative concentration profiles of F and O, as well as of CO and CO2, have been determined with this technique, as a function of the oxygen content in the feed. The important role played by atomic F as active etchant for both Si and SiO2 substrates has been confirmed.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 52 (3), 1259-1265, 1981-03-01
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1363107368420926720
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- NII論文ID
- 30015875805
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.329748
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- ISSN
- 10897550
- 00218979
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