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- Wen-Yaung Lee
- IBM Research Laboratory, San Jose, California 95193
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- J. M. Eldridge
- IBM Research Laboratory, San Jose, California 95193
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- G. C. Schwartz
- IBM System Product Division, East Fishkill, New York 12533
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<jats:p>Aluminum and Al-Cu conductor lines etched with a Cl containing plasma in low-pressure diode systems corroded rapidly upon atmospheric exposure. The mechanisms underlying this corrosion problem were investigated using Auger electron and x-ray photoelectron spectroscopies. Reactive ion etching resulted in a nonprotective oxide layer and thus rendered the etched samples more susceptible to atmospheric corrosion. Factors contributing to the increased reactivity of etched samples includes C and Cl contamination, radiation damage, and for Al-Cu alloys, Cu enrichment. A thermal oxidation treatment at temperatures of ∼300–350 °C and l atm O2 pressure for ≳30–45 min was found to be effective in restoring the protective oxide layer and thus improving the corrosion resistance of etched samples.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 52 (4), 2994-2999, 1981-04-01
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360011145037205888
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- NII論文ID
- 30015876253
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.329043
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- ISSN
- 10897550
- 00218979
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