Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injection

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  • Chih-Tang Sah
    Solid State Electronics Laboratory, Department of Electrical Engineering and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • Jack Yuan-Chen Sun
    Solid State Electronics Laboratory, Department of Electrical Engineering and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • Joseph Jeng-Tao Tzou
    Solid State Electronics Laboratory, Department of Electrical Engineering and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

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<jats:p>Analysis of the generation and annealing kinetics of U-shaped and peaked donorlike interface density of states (DOS’s) are reported. The U-shaped interface DOS appears to be related to oxygen deficiency or silicon dangling bonds formed during oxidation and it does not anneal after 50 h at 25 C but anneals rapidly (minutes) above 300 C in hydrogen containing ambients, suggesting Si-H bond formation during anneal. The U-shaped DOS reappears following a first-order kinetics when 10.2-eV photogenerated holes are injected into the oxide, suggesting that these Si-H bonds are broken by hole capture and dissolved hydrogen molecules are formed. As many as three donorlike interface DOS peaks above Si midgap are also generated by the 10.2-eV photoholes following a first-order kinetics, and they appear to be related to excess oxygen or oxygen dangling bonds formed at the interface during oxidation. These donor DOS peaks anneal out in less than 50 h at 25 C following a second-order annealing kinetics, suggesting that the oxygen dangling bonds react with H2 to form SiO-H. Band edge tail states seem also evident whose density is not affected by the photoinjected holes suggesting an association with strained Si-Si bonds.</jats:p>

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