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- F. Shinoki
- Electrotechnical Laboratory, Tanashi, Tokyo, Japan
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- A. Itoh
- Electrotechnical Laboratory, Tanashi, Tokyo, Japan
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抄録
<jats:p>The reactive mechanism of rf reactive sputtering has been investigated by mass spectrometry in an rf diode sputtering system. The result indicates that the gettering action of the sputtered active atom deposits influences the progress of reactive sputtering in addition to the target reaction. A model, taking the gettering action into consideration, is presented for the reactive sputtering of a metal. This model shows that an abrupt steplike decrease in the sputtering rate may occur at a definite partial pressure of a reactive gas p* in the plasma. The pressure p* is determined from the gettering rate of the sputtered deposits relative to the throughput of the reactive gas. The value of the pressure p* calculated on this model is in good agreement with the experimental results.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 46 (8), 3381-3384, 1975-08-01
AIP Publishing
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詳細情報
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- CRID
- 1360292620332733568
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- NII論文ID
- 30015879386
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.322242
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- ISSN
- 10897550
- 00218979
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