Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin-Film Conductors

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  • M. J. Attardo
    IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533
  • R. Rutledge
    IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533
  • R. C. Jack
    IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533

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<jats:p>A statistical metallurgical model of the random structural defects which cause electromigration failure in aluminum thin-film conductors is presented. The model relates time-to-failure to the various divergences which may be present in the conductor. Structural divergences due to differences in grain size, grain-boundary mobility, and grain-boundary orientation with respect to the electric field vector E lim →, are considered. The statistical distributions of divergences due to these attributes are empirically determined. A computer is then used to simulate both the structure of a thin-film conductor and its time-to-failure. The simulation model is used to predict the dependence of conductor reliability on such microscopic design features as grain size distribution, conductor length, and conductor width. The curves produced by computer simulation are then compared with those derived from experimental data.</jats:p>

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