Synchrotron Radiation‐Excited Chemical Vapor Deposition of Silicon Nitride Films from a SiH4 + NH 3 Gas Mixture
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- Hakaru Kyuragi
- NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa‐prefecture, 243‐01 Japan
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- Tsuneo Urisu
- NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa‐prefecture, 243‐01 Japan
この論文をさがす
収録刊行物
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- Journal of The Electrochemical Society
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Journal of The Electrochemical Society 138 (11), 3412-3416, 1991-11-01
The Electrochemical Society
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詳細情報 詳細情報について
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- CRID
- 1360299773113059840
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- NII論文ID
- 30016155285
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- NII書誌ID
- AA00697016
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- ISSN
- 19457111
- 00134651
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- データソース種別
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- Crossref
- CiNii Articles