Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

• J. Nakata

収録刊行物

• Physical Review B

  Physical Review B 43 (18), 14643-14668, 1991-06-15

  American Physical Society (APS)

詳細情報

• CRID: 1360581248088994048
• NII論文ID: 30019037401
• NII書誌ID: AA00773566
• DOI: 10.1103/physrevb.43.14643
• ISSN: 10953795
• ISSN: 01631829
• Web Site: http://link.aps.org/article/10.1103/PhysRevB.43.14643
• Web Site: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14643/fulltext
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