Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS

• H. Ofuchi

• D. Kawamura

• J. Tsuchiya

• N. Matsubara

• M. Tabuchi

• Y. Fujiwara

• Y. Takeda

抄録

For understanding the luminescence of Er atoms in III–V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 × 10 12  Er atoms in a 1.5 mm × 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 × 10 12  atoms and 1.2 × 10 13  atoms of Er.

収録刊行物

• Journal of Synchrotron Radiation

  Journal of Synchrotron Radiation 5 (3), 1061-1063, 1998-05-01

  International Union of Crystallography (IUCr)

キーワード

• Instrumentation
• Nuclear and High Energy Physics
• Radiation

詳細情報

• CRID: 1360855571179726976
• NII論文ID: 30019517110
• NII書誌ID: AA11022317
• DOI: 10.1107/s0909049597018566
• ISSN: 09090495
• Web Site: http://journals.iucr.org/s/issues/1998/03/00/kr3302/kr3302.pdf
• データソース種別:
  • Crossref
  • CiNii Articles