Resistivity changes and phase evolution in W–N films sputter deposited in Ne–N2 and Ar–N2 discharges

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  • Karl John Huber
    Materials Department and the Laboratory for Surface Studies, University of Wisconsin–Milwaukee, Milwaukee, Wisconsin 53201
  • Carolyn Rubin Aita
    Materials Department and the Laboratory for Surface Studies, University of Wisconsin–Milwaukee, Milwaukee, Wisconsin 53201

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<jats:p>The effect of discharge N2 content and rare carrier gas type on the crystal structure and electrical resistivity of sputter deposited W–nitride films is reported here. A diode apparatus was used to sputter a W target in rf-excited Ne–N2 and Ar–N2 discharges spanning composition range from pure rare gas to pure N2. Postdeposition analysis included x-ray diffraction and four-point probe resistivity measurements. The results show that in Ar–N2 discharges, phase evolution proceeds with increasing discharge N2 content as follows: αW+βW→low-resistivity microcrystalline phase, a-W(N)→W2N1+x→high-resistivity phase, X.W–nitride. Ths use of Ne–N2 discharge accelerated the formation of the higher N content phases and suppressed the formation of a-W(N).</jats:p>

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