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- C. Reyes-Betanzo
- Centro de Componentes Semicondutores–CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil
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- S. A. Moshkalyov
- Centro de Componentes Semicondutores–CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil
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- J. W. Swart
- Centro de Componentes Semicondutores–CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil
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- A. C. S. Ramos
- Instituto de Fı́sica “Gleb Wataghin”–IFGW, UNICAMP, CEP 13083-970, Campinas, SP, Brazil
抄録
<jats:p>Results of a comparative study of SiNx, SiO2 and Si etching in high- and low-density O2–N2 based plasmas with small additions of SF6 are presented. Higher selectivities of SiNx etching over both SiO2 (up to 50–70) and Si (up to 20) are obtained in a high-density reactor as compared with low-density reactive ion etching. Plasma and surface processes responsible for etching are analyzed. Kinetics of NO molecules responsible for enhanced nitride etching is shown to be distinctly different for low- and high-density plasma conditions. Possible ways of further optimization of the process are discussed.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (2), 461-469, 2003-02-10
American Vacuum Society
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詳細情報
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- CRID
- 1360855568595086976
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- NII論文ID
- 30020309191
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- ISSN
- 15208559
- 07342101
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- データソース種別
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- Crossref
- CiNii Articles