Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

  • C. Reyes-Betanzo
    Centro de Componentes Semicondutores–CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil
  • S. A. Moshkalyov
    Centro de Componentes Semicondutores–CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil
  • J. W. Swart
    Centro de Componentes Semicondutores–CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil
  • A. C. S. Ramos
    Instituto de Fı́sica “Gleb Wataghin”–IFGW, UNICAMP, CEP 13083-970, Campinas, SP, Brazil

抄録

<jats:p>Results of a comparative study of SiNx, SiO2 and Si etching in high- and low-density O2–N2 based plasmas with small additions of SF6 are presented. Higher selectivities of SiNx etching over both SiO2 (up to 50–70) and Si (up to 20) are obtained in a high-density reactor as compared with low-density reactive ion etching. Plasma and surface processes responsible for etching are analyzed. Kinetics of NO molecules responsible for enhanced nitride etching is shown to be distinctly different for low- and high-density plasma conditions. Possible ways of further optimization of the process are discussed.</jats:p>

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