Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures

• C. Reyes-Betanzo

  Instituto Nacional de Astrofı́sica, Óptica y Electrónica—INAOE, Apartado Postal 51, CP 72000, Puebla, Pue. México

• S. A. Moshkalyov

  Centro de Componentes Semiconductores—CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil

• A. C. S. Ramos

  Instituto de Fı́sica “Gleb Wataghin”—IFGW, UNICAMP, CEP 13083-970, Campinas, SP, Brazil

• J. W. Swart

  Centro de Componentes Semiconductores—CCS, UNICAMP, C.P. 6061, CEP 13083-970, Campinas, SP, Brazil

抄録

The results of a study of SiNx, SiO2, and Si etching in a high-density electron cyclotron resonance plasma using mixtures containing SF6, NF3, N2, O2, and Ar are presented. Higher selectivities of SiNx etching over SiO2 (up to ∼100) were achieved with NF3, while higher selectivities over Si (up to 5–10) were obtained with SF6-based mixtures. Plasma and surface processes responsible for etching are analyzed, and mechanisms of nitride etching in NF3-based plasmas are proposed.

収録刊行物

• Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (4), 1513-1518, 2004-07-01

  American Vacuum Society

キーワード

• Surfaces, Coatings and Films
• Surfaces and Interfaces
• Condensed Matter Physics

詳細情報

• CRID: 1363951795644061952
• NII論文ID: 30020309922
• DOI: 10.1116/1.1701858
• ISSN: 15208559
• ISSN: 07342101
• Web Site: https://pubs.aip.org/avs/jva/article-pdf/22/4/1513/12770752/1513_1_online.pdf
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