Removal of particles during plasma processes using a collector based on the properties of particles suspended in the plasma

DOI PDF 被引用文献4件
  • Heru Setyawan
    Japan Science and Technology Agency Innovation Plaza Hiroshima, , 3-10-23 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
  • Manabu Shimada
    Hiroshima University Department of Chemical Engineering, Graduate School of Engineering, , 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
  • Yutaka Hayashi
    Hiroshima University Department of Chemical Engineering, Graduate School of Engineering, , 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
  • Kikuo Okuyama
    Hiroshima University Department of Chemical Engineering, Graduate School of Engineering, , 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan

抄録

<jats:p>A particle removal system based on the properties of charged particles suspended in a plasma for use in controlling particle contamination during the preparation of silicon dioxide thin films in a plasma-enhanced chemical vapor deposition reactor is described. Since the particles suspended in the plasma carry a negative charge, the application of a positive bias to a metal tube inserted into the plasma would attract negatively charged particles. The system effectively removes particles from the trap regions during operation of the plasma. Even particles as small as about 10nm in size can be removed using this method. Films prepared using the installed particle removal system were found to be nearly free from particle contamination. This is different from the case when the particle removal system is not installed, where some particles are deposited on the film. Even though the particle removal system reduces the rate of film growth by about 40%, it is offset by theresulting clean film, which is free from particle contamination.</jats:p>

収録刊行物

被引用文献 (4)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ