Formation of low resistance Pt ohmic contacts to <i>p</i>-type GaN using two-step surface treatment
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- Ja-Soon Jang
- Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea
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- Seong-Ju Park
- Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea
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- Tae-Yeon Seong
- Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea
抄録
<jats:p>Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, that was simply BOE treated, yields 2.1(±0.9)×10−2 Ω cm2. However, the contact which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 2.0(±3.5)×10−5 Ω cm2. To the best of our knowledge, this is the lowest contact resistance reported hitherto for the contacts on p-GaN. The effective Schottky barrier heights (SBHs) of the differently surface-treated contacts were determined using the Norde and current–voltage methods. It is shown that the SBHs are dependent upon the surface treatment conditions.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17 (6), 2667-2670, 1999-11-01
American Vacuum Society
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詳細情報 詳細情報について
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- CRID
- 1361137043842794112
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- NII論文ID
- 30020314309
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- DOI
- 10.1116/1.591045
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- ISSN
- 15208567
- 10711023
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- データソース種別
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