Mask electron modeling for Coulomb interaction by mask-scattered electrons in electron-beam projection lithography

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  • Hiroshi Yamashita
    ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
  • Victor S. H. Wen
    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720-1770
  • Andrew R. Neureuther
    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720-1770
  • Eiichi Nomura
    Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

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<jats:p>A rigorous statistical Coulomb interaction simulator that can take into account mask electrons was developed. In electron-beam (EB) projection lithography, many electrons incident to an absorber or a scatterer pass through the EB mask. These mask electrons, however, have not been considered in a simulation of Coulomb interaction. In a novel simulation approach, an assessment has been made of the effects of mask electrons on image quality and flare due to electron–electron interactions. The statistical electron–electron interactions from mask electrons under various conditions are simulated by injecting them into a simulation domain and using the fast multipole accelerated method to rigorously follow all interactions as a function of time. It was found that mask electrons contribute to the trajectory displacement effect and increase the number of deviated electrons in the pattern area by four to five times when the accelerating voltage is 125 kV, the beam current density is 0.1 A/cm2, the mask thickness is 10 μm, and the electron transmittance is 95%.</jats:p>

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