New concept for high-throughput multielectron beam direct write system

DOI PDF 被引用文献5件
  • Masato Muraki
    Nanotechnology and Advanced System Research Laboratories, Canon Inc., 20-2, Kiyohara-Kogyo-danchi, Utsunomiya, Tochigi 321-3292, Japan
  • Susumu Gotoh
    Nanotechnology and Advanced System Research Laboratories, Canon Inc., 20-2, Kiyohara-Kogyo-danchi, Utsunomiya, Tochigi 321-3292, Japan

抄録

<jats:p>A new multielectron-beam optical system with correction lens array (CLA) is proposed. The CLA is arranged between an electron source and reduction optics. The CLA can generate plural intermediate images of the electron source as a multisource, and moreover can compensate field curvature and distortion of the reduction optics. The proposed system was designed and optimized through simulations. The specifications are field size of 250 μm square, convergence beam angle of 10 mrad, 64×64 beams, individual beam size of φ25 nm, accelerating voltage of 50 kV, and demagnification ratio of 50. The practical resolution for various resist processes is estimated considering the Coulomb interaction effect, and the throughput is simulated. The proposed system offers the possibility of “maskless” electron beam lithography with throughput in excess of 50 wafers/h (8 in.) for the International Technology Roadmap for Semiconductors (ITRS) 100 nm and 70 nm nodes at 3 μC/cm2 resist sensitivity.</jats:p>

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