Structure and stability of passivating arsenic sulfide phases on GaAs surfaces

• C. J. Sandroff

  Bellcore, Red Bank, New Jersey 07701

• M. S. Hegde

  Bellcore, Red Bank, New Jersey 07701

• C. C. Chang

  Bellcore, Red Bank, New Jersey 07701

抄録

Passivating AsxSy phases that form on GaAs after reactions with aqueous sulfides [Na2S⋅9H2O and (NH4)2S] decompose in the presence of oxygen and light, producing a surface composed primarily of As2O3. X-ray photoelectron spectroscopy (XPS) shows that (NH4)2 S-treated surfaces degrade in two steps with the initial AsxSy (present as a disulfide) degrading by S–S bond cleavage to yield As2O3 and an As2S3 phase like the one that forms on GaAs after Na2S⋅9H2O reactions. XPS reveals little decomposition of surface sulfides in the presence of light or oxygen alone, showing that GaAs passivation could be made long-lived if either is rigorously excluded.

収録刊行物

• Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 7 (4), 841-844, 1989-07-01

  American Vacuum Society

キーワード

• General Engineering

詳細情報

• CRID: 1360298344391335296
• NII論文ID: 30020318850
• DOI: 10.1116/1.584611
• ISSN: 23279877
• ISSN: 0734211X
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/7/4/841/12075455/841_1_online.pdf
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