High resolution atomic force microscopy potentiometry

• J. M. R. Weaver

  IBM Research, T. J. Watson Research Center, Yorktown Heights, New York 10598

• David W. Abraham

  IBM Research, T. J. Watson Research Center, Yorktown Heights, New York 10598

抄録

A method is presented for performing attractive-mode force potentiometry with submillivolt accuracy and a typical spatial resolution of order 50 nm. The technique permits measurements to be made in air on specimens which may be passivated or oxidized, conducting or semiconducting, with virtually no sensitivity to oxide thickness or character. An initial demonstration is presented showing voltage measurements on a commercial operational amplifier.

収録刊行物

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 9 (3), 1559-1561, 1991-05-01

  American Vacuum Society

キーワード

• Electrical and Electronic Engineering
• Condensed Matter Physics

詳細情報

• CRID: 1360574096159198592
• NII論文ID: 30020320866
• NII書誌ID: AA10804928
• DOI: 10.1116/1.585423
• ISSN: 15208567
• ISSN: 10711023
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/9/3/1559/11468419/1559_1_online.pdf
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