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- J. W. Butterbaugh
- IBM General Technology Division, Essex Junction, Vermont 05452
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- D. C. Gray
- Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, Massachusetts 02139
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- H. H. Sawin
- Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, Massachusetts 02139
抄録
<jats:p>The major species present in a fluorocarbon plasma environment were simulated and independently controlled using radical and ion beams in an ultrahigh-vacuum apparatus. The beams used in this study were chosen to determine the importance of CFx radicals in a CF4 plasma; the beams included F and CF2, with a beam of Ar+ to simulate energetic ion bombardment. Both CF2 and F enhance the etching yield of SiO2 under energetic Ar+ bombardment; however, the enhancement with F is twice that seen with CF2 at similar fluxes. When CF2 and F fluxes are used simultaneously, F dominates and the CF2 flux has little effect on the overall etching yield. Combined with previous work on Si substrates, these results are consistent with qualitative theories for SiO2/Si selectivity in fluorocarbon plasmas. Possible elementary steps in the ion-enhanced etching process are proposed and reduced to a two-parameter model which represents the process as ion-enhanced neutral adsorption followed by ion-induced reaction to form volatile products.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 9 (3), 1461-1470, 1991-05-01
American Vacuum Society
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詳細情報 詳細情報について
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- CRID
- 1364233270642420736
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- NII論文ID
- 30020320916
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- DOI
- 10.1116/1.585451
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- ISSN
- 15208567
- 10711023
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- データソース種別
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- Crossref
- CiNii Articles