Electron-beam direct writing system EX-8D employing character projection exposure method

• K. Hattori

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• R. Yoshikawa

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• H. Wada

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• H. Kusakabe

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• T. Yamaguchi

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• S. Magoshi

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• A. Miyagaki

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• S. Yamasaki

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• T. Takigawa

  Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

• M. Kanoh

  Manufacturing Engineering Research Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 225, Japan

• S. Nishimura

  Manufacturing Engineering Research Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 225, Japan

• H. Housai

  Manufacturing Engineering Research Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 225, Japan

• S. Hashimoto

  Manufacturing Engineering Research Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 225, Japan

抄録

An electron-beam direct writing system which adopts character projection methods in addition to conventional variable-shaped beam methods, has been constructed for 0.15 μm class ultra-large scale integration pattern fabrication. This system is a modified version of our variable-shaped beam machine. The electron optical system adopts a three stage octapole deflector for a 2 mm field and installs an aperture plate exchange mechanism for character projection. The objective lens system was designed so that the beam resolution is 0.04 μm. An optimization study to write a 1G-dynamic random access memory pattern with 0.15 μm design rules showed that a preferable character size and number are 2.5 μm and 48, respectively. The writing speed of this system is designed to be 110 s a chip, using the characters for memory cells as well as peripheral circuits. An advanced beam calibration method has been developed for beam current density and for character size, direction, and position. This method effectively adjusts the current density for each character to be the same on wafers. The beam position is accurately corrected by analyzing the obtained beam intensity distribution.  

収録刊行物

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 11 (6), 2346-2351, 1993-11-01

  American Vacuum Society

キーワード

• Electrical and Electronic Engineering
• Condensed Matter Physics

詳細情報

• CRID: 1364233269462045184
• NII論文ID: 30020322055
• DOI: 10.1116/1.586984
• ISSN: 15208567
• ISSN: 10711023
• ISSN: http://id.crossref.org/issn/00225355
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/11/6/2346/12097228/2346_1_online.pdf
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