Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology

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  • H. R. Kaufman
    Department of Physics, Colorado State University, Fort Collins, Colorado 80523
  • J. J. Cuomo
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
  • J. M. E. Harper
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York, 10598

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<jats:p>The technology of broad-beam ion sources used in sputtering applications is reviewed. The most frequently used discharge chambers are described, together with procedures for predicting performance. A new, compact ion source is described. Ion acceleration is reviewed, with particular emphasis on recent low-energy techniques. Some of these techniques include three-grid, small-hole two-grid, and one-grid ion optics. A new material for fabrication of high-precision ion optics is silicon. Because no stresses are introduced with the etching techniques used, the finished grid can be held to very close tolerances. A recent innovation for sputtering applications is the use of Hall-current acceleration. This technique uses a magnetic field interacting with an electron current to provide the accelerating electric field, thereby avoiding the usual space-charge limit on ion current density that is associated with gridded optics. Electron emission is also reviewed, with new hollow cathodes promising improved lifetimes. The overall picture is one of greatly improved ion source capability, with particularly large improvements in low-energy ion current densities.</jats:p>

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