Atomic Resolution of the Silicon (111)-(7×7) Surface by Atomic Force Microscopy
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- Franz J. Giessibl
- Park Scientific Instruments, 1171 Borregas Avenue, Sunnyvale, CA 94089, USA.
抄録
<jats:p>Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7×7) surface was imaged in a noncontact mode by force microscopy with atomic resolution (6 angstroms lateral, 0.1 angstrom vertical).</jats:p>
収録刊行物
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- Science
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Science 267 (5194), 68-71, 1995-01-06
American Association for the Advancement of Science (AAAS)
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詳細情報 詳細情報について
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- CRID
- 1361699995611259776
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- NII論文ID
- 30020562353
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- ISSN
- 10959203
- 00368075
- http://id.crossref.org/issn/00368075
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- データソース種別
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