Step Coverage and Electrical Properties of (Ba, Sr)TiO<sub>3</sub> Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)<sub>2</sub>

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  • Kawahara Takaaki
    Semiconductor Research Laboratory, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661
  • Yamamuka Mikio
    Semiconductor Research Laboratory, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661
  • Makita Tetsuro
    Semiconductor Research Laboratory, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661
  • Naka Jiro
    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661
  • Yuuki Akimasa
    Semiconductor Research Laboratory, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661
  • Mikami Noboru
    Semiconductor Research Laboratory, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661
  • Ono Kouichi
    Semiconductor Research Laboratory, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661

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  • Step Coverage and Electrical Properties of (Ba,Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)2.

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Thin films of (Ba, Sr)TiO3 (BST) with high dielectric constant were prepared on Pt/ SiO2/Si substrates of 6-inch-diameter by liquid source chemical vapor deposition using Ba(DPM)2, Sr(DPM)2 and TiO(DPM)2 (DPM=dipivaloylmethanato; C11H19O2) dissolved in tetrahydrofuran (THF). The reproducibility of ± 3 % for the film composition was achieved by optimizing the deposition procedures. It was found that the coverage of 72%, obtained at the substrate temperature T s=753 K, was better than those obtained using other Ti sources such as Ti(O-i-Pr)4 (TTIP) and Ti(O-i-Pr)2(DPM)2. The electrical properties of the 480-Å-thick BST film, deposited at T s=753 K using TiO(DPM)2, were as follows: dielectric constant ε =230, equivalent SiO2 thickness t eq=7.8 Å, leakage current density J L=6.7× 10-6 A/cm2 at 1.65 V and dielectric loss tan δ =0.013.

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