Preparation and Properties of Ru and RuO<sub>2</sub> Thin Film Electrodes for Ferroelectric Thin Films

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  • Maiwa Hiroshi
    Department of Materials Science and Ceramic Technology, Faculty of Engineering, Shonan Institute of Technology, 1–1–25 Tsujido–Nishikaigan, Fujisawa, Kanagawa 251
  • Ichinose Noboru
    Department of Materials Science and Engineering, School of Science and Engineering, Waseda University, 3–4–1 Okubo, Shinjuku–ku, Tokyo 169
  • Okazaki Kiyoshi
    Department of Materials Science and Ceramic Technology, Faculty of Engineering, Shonan Institute of Technology, 1–1–25 Tsujido–Nishikaigan, Fujisawa, Kanagawa 251

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  • Preparation and Properties of Ru and RuO2 Thin Film Electrodes for Ferroelectric Thin Films.

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Ru and RuO2 thin films were prepared by RF magnetron sputtering. The crystalline structure and electrical properties of these films were investigated. Reactive sputtering of a ruthenium metal target was carried out in a mixed gas of argon and oxygen at 580° C. Total pressure (P O<SUB>2</SUB>+P Ar) was controlled to maintain a constant pressure of 1 Pa. The RuO2 single phase could be obtained when P O<SUB>2</SUB> was 0.5 Pa and the deposition rate was about 30 nm/min. The resistivity of the 290 nm-thick RuO2 thin films deposited on SiO2(1000 nm)/Si was 54.9 µ Ω· cm. However, the resistivity increased with decreasing film thickness. Fatigue resistance of (Pb, La)TiO3 thin films with RuO2 as top and bottom electrodes was improved compared to the films on Pt electrodes.

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