Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth.

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  • Kamata Isaho
    Central Research Institute of Electric Power Industry, Yokosuka Research Laboratory,<BR> 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
  • Tsuchida Hidekazu
    Central Research Institute of Electric Power Industry, Yokosuka Research Laboratory,<BR> 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
  • Jikimoto Tamotsu
    Central Research Institute of Electric Power Industry, Yokosuka Research Laboratory,<BR> 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
  • Izumi Kunikazu
    Central Research Institute of Electric Power Industry, Yokosuka Research Laboratory,<BR> 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

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In this paper, we studied the structural transformation of screw dislocations through gas-phase 4H-SiC epitaxial growth. We confirmed based on the numbers and features of etch pits on a surface after KOH treatment that some micropipes were closed in the epitaxial layer, and were divided into several elementary screw dislocations. We discuss the magnitude of Burgers vectors of micropipes in 4H-SiC substrates in relation to the number of elementary screw dislocations generated by micropipe closing. A depth analysis further revealed that most micropipe closings took place in the initial stage of epitaxial growth.

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