GaN-Based High Power Blue-Violet Laser Diodes.

• Tojyo Tsuyoshi

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Asano Takeharu

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Takeya Motonobu

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Hino Tomonori

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Kijima Satoru

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Goto Shu

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Uchida Shiro

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

• Ikeda Masao

  Development Center, Sony Shiroishi Semiconductor Inc. 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734, Japan

抄録

The epitaxial lateral overgrowth (ELO) technique is an important technology for improving the characteristics of GaN-based laser diodes (LDs). The photoluminescence intensities from GaN and GaInN multiple quantum well active layers in the ELO-GaN wing region were found to be higher than those in the seed region. This indicates that the density of dislocations in the wing region could be reduced significantly. This is evidenced by dislocation densities of less than 10⁶ cm^-2 as determined from transmission emission microscopy and etching-pit-density measurements. The cleaved facets of LDs on ELO-GaN and sapphire were observed by atomic forced microscopy. Although the roughness of GaN cleaved facets on sapphire were high (Ra > 10 nm), the roughness in the ELO-GaN wing region was found to be as smooth as that of GaAs cleaved facet (Ra < 1 nm). The characteristics of LDs on ELO-GaN were found to be superior to those on sapphire as a result of smoother facets and lower dislocation densities.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 40 (5A), 3206-3210, 2001

  The Japan Society of Applied Physics

キーワード

• laser diodes
• GaN
• GaInN
• MQW
• ridge
• ELO
• cleave
• EPD

詳細情報

• CRID: 1390001206251447424
• NII論文ID: 10006202530
• NII論文ID: 30021822021
• NII論文ID: 130004528404
• NII論文ID: 210000049468
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.40.3206
• COI: 1:CAS:528:DC%2BD3MXkt1Cgs7o%3D
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 5803130
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5803130
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.40.3206
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.40.3206/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可