Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory.

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  • O'uchi Shin-ichi
    School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Tsubokura Takeshi
    School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Tajima Takuro
    School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Amakawa Shuhei
    School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Fujishima Minoru
    School of Frontier Sciences, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Hoh Koichiro
    School of Frontier Sciences, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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The mechanism of electron storage was studied in a metal-oxide-silicon (MOS)-type single-electron memory which utilized the direct tunneling of electrons between a silicon floating dot and the conducting channel on the surface of silicon substrate. Time constants of charging and discharging were derived by a simple analysis of a single-electron box circuit, taking the structure of the energy band of silicon into consideration. It was shown that the features of the energy band were substantial for the memory function of the device and that a write time of the order of sub-microseconds was obtained; 1010 times longer retention time was also obtained with compatibility in the same device at room temperature.

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