Fabrication of Carbon-Based Field Emitters Using Stamp Technology.

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  • Baba Akiyoshi
    Center for Microelectronic Systems, Kyushu Institute of Technology, 680–4 Kawazu, Iizuka, Fukuoka 820–8502, Japan
  • Hizukuri Masafumi
    Center for Microelectronic Systems, Kyushu Institute of Technology, 680–4 Kawazu, Iizuka, Fukuoka 820–8502, Japan
  • Iwamoto Masakazu
    Center for Microelectronic Systems, Kyushu Institute of Technology, 680–4 Kawazu, Iizuka, Fukuoka 820–8502, Japan
  • Asano Tanemasa
    Center for Microelectronic Systems, Kyushu Institute of Technology, 680–4 Kawazu, Iizuka, Fukuoka 820–8502, Japan

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We propose and demonstrate stamp technology, a novel processing technique for a field electron emitter, in which emitter tips are fabricated by pressing a mold into a spin-coated organic material to completely transform the shape of the mold. The material is then modified by ion irradiation to produce a carbon-based emitter material. Starting materials tested were a high-temperature-cured polyimide and a photoresist (novolac resin). The shape of the mold can be completely transferred to these materials at pressure over 700 MPa at 250°C. A field-emission current up to the order of μA is obtained from emitters fabricated by this new technology with modification using Ar-ion irradiation at an energy of 100 keV to a dose of 3×1016 cm-2. The ion-beam-irradiation effect on polyimide and photoresist materials is also investigated in terms of electrical conductivity and chemical bonds.

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