Electron-Cyclotron-Resonance Sputtered SrTiO3 Thin Films.

• Itsumi Manabu

  System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan

• Ohfuji Shin–ichi

  System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan

• Akiya Hideo

  System Electronics Laboratories, NTT, 3–1, Morinosato Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan

Bibliographic Information

Other Title

• Electron Cyclotron Resonance Sputtered
• Electron-Cyclotron-Resonance Sputtered SrTiO₃ Thin Films

Abstract

SrTiO₃ thin films deposited by electron-cyclotron-resonance (ECR) plasma sputtering at 400^° C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO₃ samples with 400^° C deposition followed by 400^° C oxygen annealing show low leakage current density (on the order of 10^-9 A/cm² at 5 V) and high dielectric breakdown strength (>4 MV/cm). SrTiO₃ thin films deposited by ECR sputtering at 400^° C are promised for capacitor dielectrics of future 1-giga-bit dynamic-random-access memories.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 35 (9B), 4963-4966, 1996

  The Japan Society of Applied Physics

Keywords

• SrTiO<SUB> 3</SUB>
• thin films
• ECR sputtering
• ferroelectric
• leakage current

Details

• CRID: 1390282681226942464
• NII Article ID: 110003955551
• NII Article ID: 30021825283
• NII Article ID: 210000039735
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.35.4963
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 4060220
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4060220
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.4963
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.4963/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed