Low-Temperature Processing of Highly Oriented Pb(Zr<sub>X</sub>Ti<sub>1-X</sub>)O<sub>3</sub> Thin Film with Multi-Seeding Layers

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  • Suzuki Hisao
    Department of Materials Science and Technology, Shizuoka University, Johoku, Hamamatsu 432, Japan
  • Kaneko Shoji
    Department of Materials Science and Technology, Shizuoka University, Johoku, Hamamatsu 432, Japan
  • Murakami Kenji
    Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432, Japan
  • Hayashi Takashi
    Department of Materials Science and Ceramic Technology, Shonan Institute of Technology, 1–1–25 Tsujido–Nishikaigan, Fujisawa, Kanagawa 251, Japan

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  • Low-Temperature Processing of Highly Oriented Pb(ZrXTi1-X)O3 Thin Film with Multi-Seeding Layers.
  • Low-Temperature Processing of Highly Or

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An improved sol-gel process using molecular-designed alkoxide precursor was described for a lead zirconate titanate (PZT) thin film. This method involves the insertion of inter-layer films of a perovskite lead titanate (PT) layer as a transient seeding layer between each PZT layers, which offers nucleation sites to reduce the activation energy for the crystallization, leading to the low processing temperature (hereafter, abbreviated as a multi-seeding process). An intermediate pyrochlore phase developed in the film by annealing at around 400° C in an air, and then was completely converted to a perovskite phase at a low temperature of 450° C. The relative permittivity of the resulting film annealed at 450° C increased with increasing film thickness and reached about 350 at 1.9 µ m. In addition, highly oriented PZT film was obtained by annealing at 500° C for 2 hours in an air. This highly oriented film exhibited high relative permittivity of about 500 due to its microstructure. As a result, it was demonstrated that multi-seeding process was desirable for obtaining a single phase perovskite PZT film at low temperatures.

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