Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts.

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  • Nishisaka Mika
    Center for Microelectronic Systems, Kyushu Institute of Technology, 680–4 Kawazu, Iizuka, Fukuoka 820, Japan
  • Asano Tanemasa
    Center for Microelectronic Systems, Kyushu Institute of Technology, 680–4 Kawazu, Iizuka, Fukuoka 820, Japan

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タイトル別名
  • Reduction of the Floating Body Effect i

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A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.

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