Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution.

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  • Magoshi Shunko
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Niiyama Hiromi
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Sato Shinji
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Kato Yoshimitsu
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Watanabe Yumi
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Shibata Tohru
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Ito Masamitsu
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Ando Atsushi
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Nakasugi Tetsuro
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Sugihara Kazuyoshi
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan
  • Okumura Katsuya
    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan

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抄録

We have developed a novel electron-beam (e-beam)/deep-ultraviolet (DUV) intralevel mix-and-match (ILM&M) lithography as a production-viable technology. The main feature of the ILM&M lithography is its use of a DUV biased exposure method for increased throughput and a combination of a variably shaped e-beam/character projection writer with a step-and-repeat DUV scanning system for accurate intralevel butting between e-beam and DUV patterns. It was demonstrated that the throughput of e-beam writing in the ILM&M lithography could reach about three times that of e-beam lithography, and that an intralevel butting accuracy of less than 50 nm could be achieved. The proposed ILM&M has been successfully applied to the development and early production of leading edge devices at our laboratory.

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